Samsung Develops 8-Layer HBM4E for Nvidia
Samsung Electronics is developing 8-layer seventh-generation High Bandwidth Memory (HBM4E) to meet Nvidia's requirements. This design reduces stack height compared to initial 12-layer or 16-layer plans and targets a speed of 17-18Gbps, a 20% increase over Samsung's initial 14.4Gbps samples. The product is intended for use in NVHBM.
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