Samsung Executive: HBM Expected to Account for Nearly 30% of DRAM Wafer Capacity Next Year

Samsung Electronics Executive Vice President Kim Taewoo stated that High Bandwidth Memory (HBM) is expected to occupy nearly 30% of total DRAM wafer capacity next year, up from the current 20%. As HBM competes with traditional DRAM for wafer capacity, increased HBM production may constrain traditional DRAM supply. TrendForce predicts that by the end of 2027, the top three global HBM suppliers will allocate 30% of their DRAM wafer input to HBM, though it will only contribute about 13% of total DRAM supply by storage capacity. Samsung began mass production of HBM4 in February and provided 12-layer HBM4E samples to clients including NVIDIA in May. Industry estimates suggest Samsung's monthly HBM wafer input will rise from approximately 180,000 this year to 250,000 next year. TrendForce also noted that AI server demand remains strong, and with limited advanced process capacity, 2027 memory supply will remain tight, with HBM prices expected to rise by 121% year-over-year.