Samsung Electronics updates next-gen DRAM roadmap, rebrands B1b as D0a

Samsung Electronics has adjusted its next-gen DRAM strategy by incorporating the B1b project into its official roadmap as the first sub-10nm DRAM, now named D0a. The previous vertical transistor DRAM project is now classified as D0a-V. This rebranding aims to accelerate the adoption of advanced packaging for general-purpose DRAM. The B1b process utilizes wafer-to-wafer hybrid bonding to connect memory cells and peripheral circuits. Samsung is evaluating B1b for the 8th generation HBM5, which is expected to enter mass production around 2029 with a performance target of over 50% higher speed than HBM4E. Commercialization of D0a DRAM is estimated to occur in approximately two years.